Aluminum‐induced crystallization and counter‐doping of phosphorous‐doped hydrogenated amorphous silicon at low temperatures
作者： M. S. Haque , H. A. Naseem , W. D. Brown
DOI: 10.1063/1.362425
关键词: X-ray photoelectron spectroscopy 、 Analytical chemistry 、 Silicon 、 Amorphous silicon 、 Chemical vapor deposition 、 Annealing (metallurgy) 、 Crystallization 、 Thin film 、 Doping 、 Materials science
摘要: Aluminum metal‐induced crystallization and doping of hydrogenated amorphous silicon (a‐Si:H) have been investigated. was evaporated onto device quality a‐Si:H films deposited in an ultrahigh vacuum plasma‐enhanced chemical vapor deposition system. These Al/a‐Si:H structures were annealed the 100–300 °C range. Electrical, surface morphological, characterizations material performed. The transmission line model technique used for electrical characterization. Raman spectroscopy showed that interacted film underneath Al pads initiates at temperatures as low 180 °C. X‐ray diffraction analysis very good polycrystallinity film. Electrical measurement, Hall measurement x‐ray photoelectron results revealed contact with becomes heavily doped by during a result annealing relatively temperatures.
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