Microstructural and analytical investigation of low temperature crystallized amorphous silicon/crystallized silicon interface using SEM and EDS
作者： R. Kishore , K. N. Sood , H. A. Naseem
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sci-hub.se 参考文章(6)
M. S. Haque, H. A. Naseem, W. D. Brown, Aluminum‐induced crystallization and counter‐doping of phosphorous‐doped hydrogenated amorphous silicon at low temperatures Journal of Applied Physics. ,vol. 79, pp. 7529- 7536 ,(1996) , 10.1063/1.362425
M. Shahidul Haque, H. A. Naseem, W. D. Brown, INTERACTION OF ALUMINUM WITH HYDROGENATED AMORPHOUS SILICON AT LOW TEMPERATURES Journal of Applied Physics. ,vol. 75, pp. 3928- 3935 ,(1994) , 10.1063/1.356039
M.K. Hatalis, D.W. Greve, High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films IEEE Electron Device Letters. ,vol. 8, pp. 361- 364 ,(1987) , 10.1109/EDL.1987.26660
Shin-Ichiro Ishihara, Takashi Hirao, Depth profile measurements of aluminium film on phosphorus-doped hydrogenated amorphous silicon layers by Auger electron spectroscopy Thin Solid Films. ,vol. 155, pp. 325- 329 ,(1987) , 10.1016/0040-6090(87)90077-0
Ram Kishore, Chris Hotz, H. A. Naseem, W. D. Brown, Aluminum-Induced Crystallization of Amorphous Silicon (α-Si:H) at 150 °C. ChemInform. ,vol. 32, ,(2010) , 10.1002/CHIN.200121202
O. Nast, S. Brehme, D.H. Neuhaus, S.R. Wenham, Polycrystalline silicon thin films on glass by aluminum-induced crystallization IEEE Transactions on Electron Devices. ,vol. 46, pp. 2062- 2068 ,(1999) , 10.1109/16.791997