In-Situ Transmission Electron Microscopy Investigation of Aluminum Induced Crystallization of Amorphous Silicon
作者： Ram Kishore , Renu Sharma , Satoshi Hata , Noriyuki Kuwano , Yoshitsuga Tomokiyo
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摘要: The interaction of amorphous silicon and aluminum films to achieve polycrystalline has been investigated using transmission electron microscope equipped with in-situ heating holder. Carbon coated nickel grids were used for TEM studies. An ultra high vacuum cluster tool was the deposition a ∼50nm a-Si system deposit Al on film. microstructural features diffraction in plain view mode observed increase temperature starting from room 275 °C. specimen loaded inside measured kept constant 5 minutes during which microstructure at fixed magnification X63K recorded pattern same area also recorded. then desired value EDP again temperatures this experiment 30, 100, 150, 200, 225, 275°C. A sequential change due interfacial diffusion boundary between Si investigated. Evolution randomly oriented grains as result revealed. After subjected resolution EDS investigations after removing excess Al. analysis crystallized performed locate distribution silicon. These studies show that induced crystallization process can be prepare well nanocrystalline by controlling annealing parameters. are very useful is being its use developing efficiency solar structures.
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