High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films
作者： M.K. Hatalis , D.W. Greve
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摘要: Thin-film transistors (TFT's) were fabricated in low-temperature (550°C) crystallized amorphous LPCVD silicon films. The performance of these devices was found to depend upon the deposition temperature. Low threshold voltages and effective mobilities as high 32 cm2/V.s are reported for 150-nm-thick films with maximum processing temperature 860°C. is shown be far superior as-deposited polycrystalline
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sci-hub.se 参考文章(11)
C. V. Thompson, Henry I. Smith, Surface‐energy‐driven secondary grain growth in ultrathin (<100 nm) films of silicon Applied Physics Letters. ,vol. 44, pp. 603- 605 ,(1984) , 10.1063/1.94842
S.D.S. Malhi, H. Shichijo, S.K. Banerjee, R. Sundaresan, M. Elahy, G.P. Pollack, W.F. Richardson, A.H. Shah, L.R. Hite, R.H. Womack, P.K. Chatterjee, H.W. Lam, Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon IEEE Transactions on Electron Devices. ,vol. 32, pp. 258- 281 ,(1985) , 10.1109/T-ED.1985.21939
B. Swaminathan, K. C. Saraswat, R. W. Dutton, T. I. Kamins, Diffusion of arsenic in polycrystalline silicon Applied Physics Letters. ,vol. 40, pp. 795- 798 ,(1982) , 10.1063/1.93263
R. Pennell, R. Catero, S. Lovelis, Fabrication of High Voltage Polysilicon TFT's on an Insulator Journal of The Electrochemical Society. ,vol. 133, pp. 2358- 2361 ,(1986) , 10.1149/1.2108407
M. Rodder, D.A. Antoniadis, Comparison of different techniques for passivation of small-grain polycrystalline-Si MOSFET's IEEE Electron Device Letters. ,vol. 6, pp. 570- 572 ,(1985) , 10.1109/EDL.1985.26233
J.R. Troxell, M.I. Harrington, J.C. Erskine, W.H. Dumbaugh, F.P. Fehlner, R.A. Miller, Polycrystalline silicon thin-film transistors on a novel 800°C glass substrate IEEE Electron Device Letters. ,vol. 7, pp. 597- 599 ,(1986) , 10.1109/EDL.1986.26486
P. H. L. Rasky, D. W. Greve, M. H. Kryder, S. Dutta, The feasibility of silicon on garnet technology Journal of Applied Physics. ,vol. 57, pp. 4077- 4079 ,(1985) , 10.1063/1.334677
W.G. Hawkins, Polycrystalline-silicon device technology for large-area electronics IEEE Transactions on Electron Devices. ,vol. 33, pp. 477- 481 ,(1986) , 10.1109/T-ED.1986.22515
Takashi Noguchi, Hisao Hayashi, Takefumi Ohshima, Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT) Japanese Journal of Applied Physics. ,vol. 25, pp. L121- L123 ,(1986) , 10.1143/JJAP.25.L121
A. E. Widmer, G. Harbeke, L. Krausbauer, E. F. Steigmeier, Growth and Physical Properties of LPCVD Polycrystalline Silicon Films Journal of The Electrochemical Society. ,vol. 131, pp. 675- 682 ,(1984) , 10.1149/1.2109041