Polycrystalline-silicon device technology for large-area electronics
作者： W.G. Hawkins
关键词:
摘要: … Implantation of boron or phosphorus into the polycrystalline-silicon device channel after the … steps involved is a novel feature of polycrystalline-silicon thin-film MOS devices. In addition …
harvard.edu
sci-hub.se 参考文章(16)
M. J. Powell, Material Properties Controlling the Performance of Amorphous Silicon Thin Film Transistors MRS Proceedings. ,vol. 33, pp. 259- ,(1984) , 10.1557/PROC-33-259
Yasuo Wada, Shigeru Nishimatsu, Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline Silicon Journal of The Electrochemical Society. ,vol. 125, pp. 1499- 1504 ,(1978) , 10.1149/1.2131703
Warren B. Jackson, N. M. Johnson, D. K. Biegelsen, Density of gap states of silicon grain boundaries determined by optical absorption Applied Physics Letters. ,vol. 43, pp. 195- 197 ,(1983) , 10.1063/1.94278
D. Pawlik, Characterization of thermal oxides grown on TaSi2/polysilicon films Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 3, pp. 492- 499 ,(1985) , 10.1116/1.583305
P. Fahey, R. W. Dutton, S. M. Hu, Supersaturation of self‐interstitials and undersaturation of vacancies during phosphorus diffusion in silicon Applied Physics Letters. ,vol. 44, pp. 777- 779 ,(1984) , 10.1063/1.94915
J. M. Andrews, Electrical conduction in implanted polycrystalline silicon Journal of Electronic Materials. ,vol. 8, pp. 227- 247 ,(1979) , 10.1007/BF02655625
Shinji Onga, Yoshihisa Mizutani, Kenji Taniguchi, Masahiro Kashiwagi, Kenji Shibata, Susumu Kohyama, Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I Japanese Journal of Applied Physics. ,vol. 21, pp. 1472- 1478 ,(1982) , 10.1143/JJAP.21.1472
Dimitri A. Antoniadis, Oxidation‐Induced Point Defects in Silicon Journal of The Electrochemical Society. ,vol. 129, pp. 1093- 1097 ,(1982) , 10.1149/1.2124034
Masakazu Kimura, Koji Egami, Influence of as‐deposited film structure on 〈100〉 texture in laser‐recrystallized silicon on fused quartz Applied Physics Letters. ,vol. 44, pp. 420- 422 ,(1984) , 10.1063/1.94770
D.J. Coe, The lateral diffusion of boron in polycrystalline silicon and its influence on the fabrication of sub-micron MOSTs Solid-State Electronics. ,vol. 20, pp. 985- 992 ,(1977) , 10.1016/0038-1101(77)90208-8