Thin film transistors modeling and parameters extraction tool
作者： O. Declerck , J.P. Bardyn
DOI: 10.1109/EASIC.1990.207984
关键词:
摘要: Presents a parameters extraction tool for transistors modeling activity, which gives way to characterize not only MOS processes but also check and validate four terminal transistor models such as polysilicon thin film transistors. >
sci-hub.se 参考文章(2)
W.G. Hawkins, Polycrystalline-silicon device technology for large-area electronics IEEE Transactions on Electron Devices. ,vol. 33, pp. 477- 481 ,(1986) , 10.1109/T-ED.1986.22515
Yannis Tsividis, Guido Masetti, None, Problems in Precision Modeling of the MOS Transistor for Analog Applications IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. ,vol. 3, pp. 72- 79 ,(1984) , 10.1109/TCAD.1984.1270059