The rhombohedral-cubic transition in the IV-VI semiconductor GeTe under high pressure

作者： A. M. Redon , J. M. Leger

关键词: High pressure 、 Thermodynamics 、 Mineralogy 、 Trigonal crystal system 、 Silicone grease 、 Materials science 、 Semiconductor 、 Hydrostatic equilibrium

摘要: Abstract The IV-VI semiconductor GeTe was studied at room temperature as a function of pressure in truly hydrostatic medium up to 8 GPa and quasi-hydrostatic environment, silicone grease, 25