摘要: … pressure-induced phase transition in the two-dimensional layered germanium disulfide GeS2 whose behavior under pressure … One-half of the tetrahedra in GeS2 are edge shared while …
sci-hub.se 参考文章(17)
K. L. Bhatia, D. P. Gosain, G. Parthasarathy, E. S. R. Gopal, Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phase. Physical Review B. ,vol. 33, pp. 1492- 1494 ,(1986) , 10.1103/PHYSREVB.33.1492
H. C. Hsueh, H. Vass, S. J. Clark, G. J. Ackland, J. Crain, High-pressure effects in the layered semiconductor germanium selenide Physical Review B. ,vol. 51, pp. 16750- 16760 ,(1995) , 10.1103/PHYSREVB.51.16750
H. C. Hsueh, M. C. Warren, H. Vass, G. J. Ackland, S. J. Clark, J. Crain, Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment. Physical Review B. ,vol. 53, pp. 14806- 14817 ,(1996) , 10.1103/PHYSREVB.53.14806
Akifumi Onodera, Ichiro Sakamoto, Yasuhiko Fujii, Nobuo Mo⁁ri, Shunji Sugai, Structural and electrical properties of GeSe and GeTe at high pressure Physical Review B. ,vol. 56, pp. 7935- 7941 ,(1997) , 10.1103/PHYSREVB.56.7935
L. G. Khvostantsev, V. A. Sidorov, Thermoelectric properties of GeTe at high hydrostatic pressure up to 8.5 GPa and its valence-band structure Physica Status Solidi B-basic Solid State Physics. ,vol. 116, pp. 83- 89 ,(1983) , 10.1002/PSSB.2221160111
A. M. Redon, J. M. Leger, The rhombohedral-cubic transition in the IV-VI semiconductor GeTe under high pressure High‐pressure science and technology. ,vol. 4, pp. 315- 317 ,(1990) , 10.1080/08957959008246107
Otto F. Sankey, David J. Niklewski, Ab initio multicenter tight-binding model for molecular-dynamics simulations and other applications in covalent systems Physical Review B. ,vol. 40, pp. 3979- 3995 ,(1989) , 10.1103/PHYSREVB.40.3979
M. Parrinello, A. Rahman, Crystal Structure and Pair Potentials: A Molecular-Dynamics Study Physical Review Letters. ,vol. 45, pp. 1196- 1199 ,(1980) , 10.1103/PHYSREVLETT.45.1196
Murat Durandurdu, D. A. Drabold, Ab initio simulation of first-order amorphous-to-amorphous phase transition of silicon Physical Review B. ,vol. 64, pp. 014101- ,(2001) , 10.1103/PHYSREVB.64.014101
Murat Durandurdu, D. A. Drabold, Pressure-induced structural phase transition of paracrystalline silicon Physical Review B. ,vol. 66, pp. 205204- ,(2002) , 10.1103/PHYSREVB.66.205204