Nitrogen Doping Effect on Phase Change Optical Disks

摘要: The nitrogen doping effect on the Ge–Sb–Te recording layer was quantitatively examined. We succeeded in quantitative analysis of concentration Ge–Sb–Te–(N) by secondary ion mass spectrometry (SIMS) observation. could be finely controlled at a high deposition rate 4.7 nm/s. addition small amount remarkably improved overwrite cycle numbers. found that most suitable from 2 to 3 at%. proposed model explain atom function layer. atoms produced nitrides, which are condensed near grain boundaries microcrystals. This resulted formation very thin wrappings, wrap crystal manner similar peel peach and suppressed micro-material flow. achieved 8×105 cycles λ=790 nm, NA=0.50 using pit position modulation (PPM) method where minimum bit length is 0.87 µm.