Phase-dependent thermal conductivity of Ge1Sb4Te7 and N:Ge1Sb4Te7 for phase change memory applications

摘要: We report the thermal conductivities of Ge1Sb4Te7 and nitrogen-doped thin films at temperatures ranging from 300 to 520 K using 3ω method. Thermal conductivity increases abruptly during transition amorphous crystalline phase. Nitrogen doping effectively suppresses crystallization process, resulting reduction lattice as well electronic conductivity. These behaviors are confirmed by x-ray diffraction, sheet conductance, measurements. Numerical modeling phase change memory device shows that with nitrogen doping, performance increase in terms lower reset current faster time can be achieved.