Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

摘要: Abstract To meet increasing demands for chemical vapor deposition methods high performance phase-change memory, cyclic plasma enhanced of Sb and GexSby films characterization their properties were performed. Two cycle sequences designed to investigate the role hydrogen gas as a reduction during film deposition. Hydrogen was not introduced into reaction chamber purge step in sequence A B. The investigated by comparing results obtained from these two concluded exert an effect combination precursor decomposition, surface maintenance termination agent, etching. These roles are discussed through consideration changes rates, oxygen concentration on film, observations morphology. Based results, deposited with adequate flow rate gas. Ge composition controlled sequences. strong affinity observed X-ray photoelectron spectroscopy analysis 3d, 4d, 3d orbitals. XPS ratios calculated be Ge0.32Sb0.68, Ge0.38Sb0.62, Ge0.44Sb0.56, Ge0.51Sb0.49 Ge0.67Sb0.33 G1S7, G1S3, G1S2, G1S1, G2S1 cycles, respectively. Crystal structures Sb, Ge, GeSb metastable phase various compositions. crystallinity decreased respect fraction. current–voltage curve introduced, electro-switching phenomenon clearly generated at typical voltage, Vth. Vth values increased conjunction proportion Ge. decrease increase explained via bonding characteristics each element.