Ge nitride formation in N-doped amorphous Ge2Sb2Te5
作者： M.-C. Jung , Y. M. Lee , H.-D. Kim , M. G. Kim , H. J. Shin
DOI: 10.1063/1.2773959
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摘要: The chemical state of N in N-doped amorphous Ge2Sb2Te5 (a-GST) samples with 0–14.3Nat.% doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge absorption (XAS). HRXPS showed negligible change the Te 4d Sb core-level spectra. In 3d spectra, a nitride (GeNx) peak developed at binding energy 30.2eV increased intensity as N-doping concentration increased. Generation GeNx confirmed These results indicate that atoms bonded to form GeNx, rather than bonding or atoms. It has been suggested formation resistance phase-change temperature.
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