High-resolution x-ray photoelectron spectroscopy on oxygen-free amorphous Ge2Sb2Te5
作者： M.-C. Jung , H. J. Shin , K. Kim , J. S. Noh , J. Chung
DOI: 10.1063/1.2236216
关键词:
摘要: Amorphous Ge2Sb2Te5 (a-GST) film, 100nm thick, was grown by cosputtering from GeTe and Sb2Te3 targets on a silicon wafer at room temperature. The native oxidized layer, which formed in air about 20nm thick measured secondary ion mass spectroscopy, removed Ne+ sputtering for 1h with 0.6kV beam energy. Core-level spectra of the Te 3d 4d, Sb Ge oxygen-free a-GST were obtained high-resolution x-ray photoelectron spectroscopy synchrotron radiation compared those GeTe. analysis implies that is composed base chemical states
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(16)
M. P. Seah, D. Briggs, Auger and x-ray photoelectron spectroscopy Wiley , Salle , Sauerlander. ,(1990)
Ryosuke Yokota, Electronic Dielectric Constants of Crystalline and Amorphous GeSb2Te4and Ge2Sb2Te5Semiconductors Japanese Journal of Applied Physics. ,vol. 28, pp. 1407- 1411 ,(1989) , 10.1143/JJAP.28.1407
Noboru Yamada, Toshiyuki Matsunaga, Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory Journal of Applied Physics. ,vol. 88, pp. 7020- 7028 ,(2000) , 10.1063/1.1314323
B. J. Kooi, J. Th. M. De Hosson, Electron diffraction and high-resolution transmission electron microscopy of the high temperature crystal structures of Gexsb2Te3+x (x=1,2,3) phase change material Journal of Applied Physics. ,vol. 92, pp. 3584- 3590 ,(2002) , 10.1063/1.1502915
S Doniach, M Sunjic, Many-electron singularity in X-ray photoemission and X-ray line spectra from metals Journal of Physics C: Solid State Physics. ,vol. 3, pp. 285- 291 ,(1970) , 10.1088/0022-3719/3/2/010
D. A. Shirley, High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of Gold Physical Review B. ,vol. 5, pp. 4709- 4714 ,(1972) , 10.1103/PHYSREVB.5.4709
Bong-Sub Lee, John R. Abelson, Stephen G. Bishop, Dae-Hwan Kang, Byung-ki Cheong, Ki-Bum Kim, Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases Journal of Applied Physics. ,vol. 97, pp. 093509- ,(2005) , 10.1063/1.1884248
Y. J. Park, J. Y. Lee, M. S. Youm, Y. T. Kim, H. S. Lee, Crystal structure and atomic arrangement of the metastable Ge2Sb2Te5 thin films deposited on SiO2∕Si substrates by sputtering method Journal of Applied Physics. ,vol. 97, pp. 093506- ,(2005) , 10.1063/1.1877821
Martijn H. R. Lankhorst, Bas W. S. M. M. Ketelaars, R. A. M. Wolters, Low-cost and nanoscale non-volatile memory concept for future silicon chips. Nature Materials. ,vol. 4, pp. 347- 352 ,(2005) , 10.1038/NMAT1350
Matthias Wuttig, Phase-change materials: towards a universal memory? Nature Materials. ,vol. 4, pp. 265- 266 ,(2005) , 10.1038/NMAT1359