Chemical states of Bi-doped GeTe (Bi: 6 at.%) thin film in structural phase transition investigated by synchrotron X-ray photoelectron spectroscopy
作者： M.-C. Jung , Y.M. Lee , Kihong Kim , J.C. Park , S.A. Song
DOI: 10.1016/J.CAP.2010.04.004
关键词: Annealing (metallurgy) 、 Doping 、 X-ray photoelectron spectroscopy 、 Thin film 、 Crystal structure 、 Amorphous solid 、 Materials science 、 Chemical state 、 Crystallography 、 Binding energy 、 General Physics and Astronomy 、 General Materials Science
摘要: abstract The chemical states of Bi (6 at.%)-doped GeTe thin film (GBT) in structural phase transition were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). Clean amorphous GBT was changed to the NaCl-type crystalline structure in-situ annealing under ultrahigh vacuum, during which transition, binding energy and shape Te 4 d core-level showed no changes, Ge 3 a spin-orbit split-enhanced feature with negligible shift, f became narrower shifted towards higher side 0.25 eV. We suggest that as meta-stable structure, atoms moved more constrained sites electron configuration.
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