Observation of molecular nitrogen in N-doped Ge2Sb2Te5
作者： Kihong Kim , Ju-Chul Park , Jae-Gwan Chung , Se Ahn Song , Min-Cherl Jung
DOI: 10.1063/1.2408660
关键词: Materials science 、 Inorganic chemistry 、 Sheet resistance 、 Vacancy defect 、 Nitrogen 、 Absorption spectroscopy 、 Doping 、 Electrical resistivity and conductivity 、 Grain boundary 、 Crystallography 、 Sputtering
摘要: Ge2Sb2Te5 (GST) film in the crystalline state was nitrogen doped using reactive sputtering method order to increase sheet resistance. High-resolution x-ray absorption spectroscopy revealed that molecular (N2) existed N-doped GST film. This finding implies both and atomic-state should be taken into account understanding structures of The is believed exist at interstitial vacancy sites, more likely grain boundaries.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(14)
M.-C. Jung, H. J. Shin, K. Kim, J. S. Noh, J. Chung, High-resolution x-ray photoelectron spectroscopy on oxygen-free amorphous Ge2Sb2Te5 Applied Physics Letters. ,vol. 89, pp. 043503- ,(2006) , 10.1063/1.2236216
Noboru Yamada, Toshiyuki Matsunaga, Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory Journal of Applied Physics. ,vol. 88, pp. 7020- 7028 ,(2000) , 10.1063/1.1314323
Youngsu Chung, Jae Cheol Lee, H. J. Shin, Direct observation of interstitial molecular N2 in Si oxynitrides Applied Physics Letters. ,vol. 86, pp. 022901- ,(2005) , 10.1063/1.1851620
Bo Liu, Zhitang Song, Ting Zhang, Jilin Xia, Songlin Feng, Bomy Chen, Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film Thin Solid Films. ,vol. 478, pp. 49- 55 ,(2005) , 10.1016/J.TSF.2004.09.057
B. J. Kooi, J. Th. M. De Hosson, Electron diffraction and high-resolution transmission electron microscopy of the high temperature crystal structures of Gexsb2Te3+x (x=1,2,3) phase change material Journal of Applied Physics. ,vol. 92, pp. 3584- 3590 ,(2002) , 10.1063/1.1502915
Martijn H. R. Lankhorst, Bas W. S. M. M. Ketelaars, R. A. M. Wolters, Low-cost and nanoscale non-volatile memory concept for future silicon chips. Nature Materials. ,vol. 4, pp. 347- 352 ,(2005) , 10.1038/NMAT1350
Matthias Wuttig, Phase-change materials: towards a universal memory? Nature Materials. ,vol. 4, pp. 265- 266 ,(2005) , 10.1038/NMAT1359
Hun Seo, Tae-Hee Jeong, Jeong-Woo Park, Cheong Yeon, Sang-Jun Kim, Sang-Youl Kim, Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge2Sb2Te5Thin Films Japanese Journal of Applied Physics. ,vol. 39, pp. 745- 751 ,(2000) , 10.1143/JJAP.39.745
C. T. Chen, Y. Ma, F. Sette, K-shell photoabsorption of theN2molecule Physical Review A. ,vol. 40, pp. 6737- 6740 ,(1989) , 10.1103/PHYSREVA.40.6737
Toshihisa Nonaka, Gentaro Ohbayashi, Yoshiharu Toriumi, Yuji Mori, Hideki Hashimoto, Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase Thin Solid Films. ,vol. 370, pp. 258- 261 ,(2000) , 10.1016/S0040-6090(99)01090-1