Direct observation of interstitial molecular N2 in Si oxynitrides
作者： Youngsu Chung , Jae Cheol Lee , H. J. Shin
DOI: 10.1063/1.1851620
关键词: XANES 、 Thin film 、 Annealing (metallurgy) 、 Silicon 、 Analytical chemistry 、 X-ray photoelectron spectroscopy 、 Materials science 、 Extended X-ray absorption fine structure 、 Absorption spectroscopy 、 Molecule 、 Physics and Astronomy (miscellaneous)
摘要: High-resolution near edge x-ray absorption spectroscopy and photoelectron were used to characterize ultrathin plasma-nitrided silicon oxides. The direct observation of interstitial molecular N2 was made by vibrationally resolved N K-edge spectroscopy. molecules trapped during the plasma nitridation at surface could be eliminated annealing via out-diffusion.
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sci-hub.se 参考文章(22)
M. Terrones, R. Kamalakaran, T. Seeger, M. Rühle, Novel nanoscale gas containers: encapsulation of N2 in CNx nanotubes Chemical Communications. pp. 2335- 2336 ,(2000) , 10.1039/B008253H
L. Skuja, B. Güttler, Detection of Interstitial Oxygen Molecules in SiO2 Glass by a Direct Photoexcitation of the Infrared Luminescence of Singlet O2. Physical Review Letters. ,vol. 77, pp. 2093- 2096 ,(1996) , 10.1103/PHYSREVLETT.77.2093
George C. King, Frank H. Read, Michel Tronc, Investigation of the energy and vibrational structure of the inner shell (1s)−1(π2p)1Π state of the nitrogen molecule by electron impact with high resolution Chemical Physics Letters. ,vol. 52, pp. 50- 54 ,(1977) , 10.1016/0009-2614(77)85118-X
O. Björneholm, A. Nilsson, A. Sandell, B. Hernnäs, N. Mrtensson, Determination of time scales for charge-transfer screening in physisorbed molecules. Physical Review Letters. ,vol. 68, pp. 1892- 1895 ,(1992) , 10.1103/PHYSREVLETT.68.1892
C. R. Brundle, XPS and UPS studies of the interaction of nitrogen‐containing molecules with nickel: The use of binding energy patterns and relative intensities to diagnose surface species Journal of Vacuum Science and Technology. ,vol. 13, pp. 301- 309 ,(1976) , 10.1116/1.568833
G.-M. Rignanese, Alfredo Pasquarello, Nitrogen bonding configurations at nitrided Si(001) surfaces and Si(001)-SiO2 interfaces: A first-principles study of core-level shifts Physical Review B. ,vol. 63, pp. 075307- ,(2001) , 10.1103/PHYSREVB.63.075307
Yoshinao Miura, Haruhiko Ono, Koichi Ando, Reoxidation effects on the chemical bonding states of nitrogen accumulated at the oxynitride/silicon interface Applied Physics Letters. ,vol. 77, pp. 220- 222 ,(2000) , 10.1063/1.126930
J.-D Hecht, F Frost, T Chassé, D Hirsch, H Neumann, A Schindler, F Bigl, In situ characterization of the nitridation of AIII–BV semiconductor surfaces by means of X-ray photoelectron spectroscopy Applied Surface Science. ,vol. 179, pp. 196- 202 ,(2001) , 10.1016/S0169-4332(01)00279-3
Eun-Cheol Lee, K. J. Chang, Electrically inactive nitrogen complex in Si oxynitride Physical Review B. ,vol. 66, pp. 233205- 233205 ,(2002) , 10.1103/PHYSREVB.66.233205
Young-Gu Jin, K. J. Chang, Mechanism for the enhanced diffusion of charged oxygen ions in SiO2. Physical Review Letters. ,vol. 86, pp. 1793- 1796 ,(2001) , 10.1103/PHYSREVLETT.86.1793