Dependence of energy band offsets at Ge2Sb2Te5/SiO2 interface on nitrogen concentration
作者： Lina Wei-Wei Fang , Zhang Zheng , Ji-Sheng Pan , Rong Zhao , Minghua Li
DOI: 10.1063/1.3079396
关键词: Doping 、 Band gap 、 Electronic band structure 、 Quasi Fermi level 、 Direct and indirect band gaps 、 Electron hole 、 Analytical chemistry 、 Materials science 、 Semimetal 、 Band offset
摘要: The electronic property for a series of nitrogen-doped Ge2Sb2Te5 phase change material was characterized using high-resolution x-ray photoelectron spectroscopy. Te 3d5/2 and Si 2p core-level spectra as well valence band were used in the analysis. As nitrogen content increases, offset also decreases, while that conduction increases. Our results show offsets on silicon oxide exhibit linear dependence film, up to 8.4 at. %.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(19)
YoungKuk Kim, Uk Hwang, Yong Jai Cho, H. M. Park, M.-H. Cho, Pyeong-Seok Cho, Jong-Heun Lee, Change in electrical resistance and thermal stability of nitrogen incorporated Ge2Sb2Te5 films Applied Physics Letters. ,vol. 90, pp. 021908- ,(2007) , 10.1063/1.2431462
Kihong Kim, Ju-Chul Park, Jae-Gwan Chung, Se Ahn Song, Min-Cherl Jung, Young Mi Lee, Hyun-Joon Shin, Bongjin Kuh, Yongho Ha, Jin-Seo Noh, Observation of molecular nitrogen in N-doped Ge2Sb2Te5 Applied Physics Letters. ,vol. 89, pp. 243520- ,(2006) , 10.1063/1.2408660
Q Li, SJ Wang, KB Li, ACH Huan, JW Chai, JS Pan, CK Ong, None, Photoemission study of energy-band alignment for RuOx∕HfO2∕Si system Applied Physics Letters. ,vol. 85, pp. 6155- 6157 ,(2004) , 10.1063/1.1839287
Youngkuk Kim, M. H. Jang, K. Jeong, M.-H. Cho, K. H. Do, D.-H. Ko, H. C. Sohn, Min Gyu Kim, Investigation of phase transition of Ge2Sb2Te5 and N-incorporated Ge2Sb2Te5 films using x-ray absorption spectroscopy Applied Physics Letters. ,vol. 92, pp. 061910- ,(2008) , 10.1063/1.2844878
M.-C. Jung, Y. M. Lee, H.-D. Kim, M. G. Kim, H. J. Shin, K. H. Kim, S. A. Song, H. S. Jeong, C. H. Ko, M. Han, Ge nitride formation in N-doped amorphous Ge2Sb2Te5 Applied Physics Letters. ,vol. 91, pp. 083514- ,(2007) , 10.1063/1.2773959
S. Privitera, E. Rimini, R. Zonca, Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements Applied Physics Letters. ,vol. 85, pp. 3044- 3046 ,(2004) , 10.1063/1.1805200
Noboru Yamada, Toshiyuki Matsunaga, Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory Journal of Applied Physics. ,vol. 88, pp. 7020- 7028 ,(2000) , 10.1063/1.1314323
YoungKuk Kim, K. Jeong, M.-H. Cho, Uk Hwang, H. S. Jeong, Kinam Kim, Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition Applied Physics Letters. ,vol. 90, pp. 171920- ,(2007) , 10.1063/1.2722203
J. R. Waldrop, R. W. Grant, Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy Applied Physics Letters. ,vol. 68, pp. 2879- 2881 ,(1996) , 10.1063/1.116355
Bong-Sub Lee, John R. Abelson, Stephen G. Bishop, Dae-Hwan Kang, Byung-ki Cheong, Ki-Bum Kim, Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases Journal of Applied Physics. ,vol. 97, pp. 093509- ,(2005) , 10.1063/1.1884248