作者: Youngkuk Kim , M. H. Jang , K. Jeong , M.-H. Cho , K. H. Do
DOI: 10.1063/1.2844878
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摘要: For this study, the phase-change materials Ge2Sb2Te5 and N-doped films were investigated using x-ray absorption near-edge structure extended fine structure. During phase transition, change in electronic is observed by shift of edge energy, i.e., structural coordination Ge–Te changes from tetrahedral to octahedral coordination, which interatomic distances are 3.12 2.83A, respectively. In addition, nitrogen incorporation into film led a p-p orbital hybridization different crystallization behavior. The caused formation Ge–N bond was related suppression transition.