The origin of the resistance change in GeSbTe films
作者： Moon Hyung Jang , Seung Jong Park , Sung Jin Park , Mann-Ho Cho , E. Z. Kurmaev
DOI: 10.1063/1.3499751
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摘要: Amorphous Ge2Sb2Te5 (a-GST) films were deposited by ion beam sputtering deposition. Extended x-ray absorption fine structure (EXAFS) data confirmed the existence of Ge–Ge homopolar bonds in films. Raman spectra also indicated that Ge tetrahedral coordination a-GST film disappeared after an annealing treatment above 220 °C. Resonantly excited Ge L2,3 emission (which probe occupied Ge 3d4s-electronic states) show phase change from amorphous to crystalline state is accompanied a reduction Ge I(L2)/I(L3) intensity ratio due L2L3N Coster–Kronig transition, indicating number carriers increased Ge 4sp valence state. These findings constitute direct evidence for contribution electronic states resistivity change.
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