作者: Neetu Kanda , Anup Thakur , A. P. Singh
DOI: 10.1063/5.0017612
关键词:
摘要: Swift heavy ion irradiation is performed on 5% Ag doped Ge2Sb2Te5 (GST) thin films to observe the changes in structural and optical properties. The have been irradiated with Ag9+ ions having 120 MeV energy. It has observed that does not leads phase change red shift Raman spectra indicates weakening of bond strength. Moreover, reduction bandgap also as an effect increasing dose. These results indicate high energy introduces defects which may lead local generation crystal nuclei. nuclei be responsible for modification electrical properties these films.