Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films
作者： R. De Bastiani , A.M. Piro , I. Crupi , M.G. Grimaldi , E. Rimini
DOI: 10.1016/J.NIMB.2008.03.037
关键词:
摘要: Abstract The archival life of phase-change memories (PCM) is determined by the thermal stability amorphous phase in a crystalline matrix. In this paper, we report effect ion beam irradiation on crystallization kinetics Ge2Sb2Te5 alloy (GST). transition rate GST films was measured situ time resolved reflectivity (TRR). to crystal transformation decreases considerably irradiated samples when fluence increases. thin subjected discussed terms free energy variation state because damage accumulation.
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