Crystallization of sputtered-deposited and ion implanted amorphous Ge2Sb2Te5 thin films
作者： E. Rimini , R. De Bastiani , E. Carria , M. G. Grimaldi , G. Nicotra
DOI: 10.1063/1.3148288
关键词: Crystal growth 、 Analytical chemistry 、 Crystal 、 Transmission electron microscopy 、 Materials science 、 Crystallography 、 Lattice constant 、 Crystallization 、 Ion implantation 、 Sputtering 、 Amorphous solid
摘要: X-ray diffraction and transmission electron microscopy have been utilized to measure the ion irradiation-induced modification in amorphous Ge2Sb2Te5 thin films. The isothermal crystallization of sputtered-deposited Sb+ irradiated samples has studied, focusing on evolution microstructure during initial stage transformation. In both samples, crystal transition occurs through nucleation face centered cubic (fcc) domains at film surface. A fast bidimensional growth crystalline nuclei films by generation transrotational grains. lattice parameter decreases as fraction increases above 80%, it approaches fcc bulk value end Ion irradiation produces a densification deposited (∼4% vertical shrinkage measured atomic force microscopy) an enhancement rate. Even amorp...
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