In situ AFM and Raman spectroscopy study of the crystallization behavior of Ge2Sb2Te5 films at different temperature
作者： Yongkuan Wu , Kun Liu , Dawei Li , Yingnan Guo , Shi Pan
DOI: 10.1016/J.APSUSC.2011.10.021
关键词:
摘要: Abstract Using in situ atomic force microscope (AFM) and Raman spectroscopy, the real-time crystallization properties of Ge2Sb2Te5 films at different temperature were characterized. The given AFM topograph phase images revealed that structure amorphous began to change a as low 100 °C. When reached 130 °C, some crystal fragments had formed film surface. Heating up 160 °C, size visible increased, but decreased higher 200 °C. was cooled down room (RT) from 200 °C, divided into grains due absence heating energy. spectra further verified evolution with temperature. This work is significance for preparation erasing data.
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