On the crystallization of thin films composed of Sb3.6Te with Ge for rewritable data storage

摘要: This article addresses the crystallization of amorphous Sb3.6Te films (40 nm thick) and 5 at. % Ge containing (10, 20, 40 as studied with transmission electron microcopy using in situ annealing. These materials exhibit growth-dominated crystallization, contrast to usual Ge2Sb2Te5 that shows nucleation-dominated crystallization. Particularly crystal-growth velocity these systems has been measured a function temperature from which activation energy for growth can be derived. The strong effect addition on total behavior is revealed by following four phenomena: increases (from 95 150 °C), 1.58 2.37 eV), nucleation rate decreases anisotropy. crystallites have special transrotational structure mechanism responsible development this delineated.