Photoemission study of energy-band alignment for RuOx∕HfO2∕Si system
作者： Q Li , SJ Wang , KB Li , ACH Huan , JW Chai
DOI: 10.1063/1.1839287
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摘要: Conductive oxides RuOx as alternative electrode on high-κ HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx∕HfO2∕Si system oxidation-state dependence of barrier height contacting to dielectrics has analyzed x-ray photoemission spectroscopy. valence- conduction-band offsets HfO2∕Si are determined be 3.05±0.1 1.48±0.1eV, respectively. heights dependent, in range 1.95–2.73eV.
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