Characteristics of Schottky contacts on n-type 4H–SiC using IrO2 and RuO2

摘要: Thermally stable Schottky contacts on n-type 4H–SiC with high barrier height were demonstrated by annealing the rare earth metal (Ir and Ru) under O2 ambient. The formation of oxides (IrO2 RuO2) after led to increase (>1.9 eV) a low reverse leakage current (∼10−9 A/cm2). Synchrotron radiation photoemission spectroscopy showed that work function IrO2 is higher about 0.23 eV than Ir binding energies Si 2p C 1s shifted toward lower 0.12 in both N2 annealed samples. oxidation caused predominant outdiffusion (RuO2), leaving vacancies behind, leading shift surface Fermi level energy vacancy. Both oxide movement played role forming contact excellent thermally stability.