Band alignment between GeTe and SiO2/metals for characterization of junctions in nonvolatile resistance change elements
作者： EK Chua , LP Shi , MH Li , R Zhao , TC Chong
DOI: 10.1063/1.3599057
关键词: Work function 、 Fermi level 、 Heterojunction 、 Band diagram 、 Amorphous solid 、 Valence (chemistry) 、 Condensed matter physics 、 Crystallography 、 X-ray photoelectron spectroscopy 、 Tungsten 、 Materials science
摘要: GeTe materials were characterized using x-ray photoelectron spectroscopy in both the amorphous and crystalline states. Valence conduction band alignments relative to a SiO2 reference measured allow diagram, work function, electron affinity be inferred. Hole barrier heights was also studied for several metal/GeTe systems (metal=Al,Ni,W) extract charge neutrality level of these interfaces Near perfect Fermi-level pinning observed contact with all metals much less GeTe.
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