Effect of metals and annealing on specific contact resistivity of GeTe/metal contacts
作者： E. K. Chua , R. Zhao , L. P. Shi , T. C. Chong , T. E. Schlesinger
DOI: 10.1063/1.4732787
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摘要: The circular transfer length method was employed to extract the specific contact resistivity, ρc of GeTe (amorphous and crystalline state) with metals (Ni, W, TiW) quantify series resistance. amorphous-GeTe also determined for different annealing conditions. Higher metal work functions produce lower both states reduced further temperatures greater than crystallization temperature. This is suggested be a consequence higher temperature required diffuse sufficient interstitial metallic atoms transform covalent bonding at interface bonding.
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