Overview of phase-change chalcogenide nonvolatile memory technology
作者： S. Hudgens , B. Johnson
DOI: 10.1557/MRS2004.236
关键词: Materials science 、 Nanotechnology 、 Flash memory 、 Semiconductor memory 、 Process (computing) 、 Chalcogenide 、 Non-volatile memory 、 Non-volatile random-access memory 、 Semiconductor 、 Optical disc
摘要: Phase-change nonvolatile semiconductor memory technology is based on an electrically initiated, reversible rapid amorphous-to-crystalline phase-change process in multicomponent chalcogenide alloy materials similar to those used rewriteable optical disks. Long cycle life, low programming energy, and excellent scaling characteristics are advantages that make a promising candidate replace flash future applications. being commercialized by number of manufacturers. Fundamental processes devices, device performance characteristics, progress toward commercialization the reviewed.
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