Non-volatile memory with overwrite capability and low write amplification

摘要: Providing for a non-volatile memory architecture having write and overwrite capabilities providing low amplification to storage system is described herein. By way of example, array disclosed comprising blocks sub-blocks two-terminal cells. The cells can be directly overwritten in some embodiments, facilitating value as one. Furthermore, the have an input-output multiplexer configuration, reducing sneak path currents during operations.