Scalable silicon based resistive memory device
作者： Steve Maxwell , Sundar Narayanan , Natividad Vasquez , Harry Yue Gee
DOI:
关键词:
摘要: A memory cell that includes a first metal layer formed over substrate is provided. The one or more complementary metal-oxide semiconductor devices. also via device connects at least portion of the and another second layer. has thickness having an edge thereof serves as electrode for by device. scales function in part independent minimum feature size
lens.org 参考文章(513)
Sung-Hyun Jo, Wei Lu, A Silicon-Based Crossbar Ultra-High-Density Non-Volatile Memory ,(2007)
Scott Brad Herner, Improved on/off ratio for non-volatile memory device and method ,(2010)
Lifeng Liu, Yuansha Chen, Jinfeng Kang, Bin Gao, Bing Sun, Xiaoyan Liu, Resistive random access memory device, method for manufacturing the same, and method for operating the same ,(2011)
Jean-Francois Franche, Stephane Coulombe, Method and system for parallel encoding of a video ,(2011)
Jong-wook Park, Nonvolatile semiconductor memory device with multiple word line voltage generators ,(1996)
John M. DeLucca, Frank A. Baiocchi, James Cargo, Modification of logic by morphological manipulation of a semiconductor resistive element ,(2010)
Wei-Su Chen, Resistive memory device and fabricating method thereof ,(2009)
Wenhu Liu, Nagarajan Raghavan, Chee Mang Ng, Kin-Leong Pey, Fabrication of RRAM Cell Using CMOS Compatible Processes ,(2011)
Sang Nguyen, Hagop Nazarian, Non-volatile memory with overwrite capability and low write amplification ,(2013)