Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge2Sb2Te5Thin Films

摘要: The crystallization behavior of nitrogen-doped amorphous Ge2Sb2Te5-(N) phase-change thin films was studied by utilizing differential scanning calorimetry, in situ ellipsometry and transmission electron microscopy. combined analysis isotherms the Johnson-Mehl-Avrami equation revealed that process changes depending on nitrogen content. Ge2Sb2Te5 film a two-step includes spherical-nucleation disc-shaped grain growth. In contrast, nitrogen-doping into suppresses second step becomes one-step is primary nucleation process. number sites during films, increased markedly with annealing temperature spherically shaped nuclei eventually saturated. effective crystallinity alloy decreased increase content, mainly due to grain-size refinement.