Characterization of Agx(Ge2Sb2Te5)1 − xthin film by RF magnetron sputtering
作者： Dong Hun Kim , Myung Sun Kim , Ran-Young Kim , Kyung Sun Kim , Ho Gi Kim
DOI: 10.1016/J.MATCHAR.2006.06.021
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摘要: Abstract We reported the Ag adding effects on crystallization behavior in Ge2Sb2Te5 film. Agx(Ge2Sb2Te5)1 − x films (where x = 0–0.2) were deposited SiO2 wafer and glass substrate by RF magnetron co-sputtering annealed RTA (rapid thermal annealing) at various temperature to crystallize. The of structural, electrical properties measured X-ray diffraction, reflectivity, AFM, SEM, DSC 4-point probe analysis. It was found that increased films. However, surface got rough when annealing contents increased. According Kissinger method, activation energy for as content is thought atoms act an amorphous stabilizer they make it hard switch from crystalline phase. From this study, we would show Ag0.06(Ge2Sb2Te5)0.94 film suitable phase change memory material because its higher structural stability.
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