Effects of nitrogen doping on the properties of Ge15Sb85 phase-change thin film

摘要: Abstract The effects of nitrogen doping on the chemical bonding state, microstructure, electrical property and thermal stability Ge 15 Sb 85 film were investigated in detail. doped N atoms tend to bond with form 3 4 , as proved by X-ray photoelectron spectroscopy analyses. diffraction patterns showed that both undoped N-doped films crystallize into a hexagonal phase very similar Sb. thickness reduction upon crystallization for is less than 5%. crystalline resistivity, temperature, amorphous state all increase after doping, while grain size decreases. By adding 7.0 at.% film, resistivity increases twelve times temperature about 50 °C. maximum 10-year retention estimated be 147 °C even higher, which will promise better data phase-change random access memory especially high-temperature application.