作者: Weihua Wu , Zifang He , Shiyu Chen , Jiwei Zhai , Sannian Song
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摘要: Effects of oxygen incorporation on the crystallization characteristics and crystal structure Ge8Sb92 films were systematically investigated. The amorphous-to-crystalline transition was studied by in situ resistance measurement. thermal stability, electrical band gap material increase significantly addition oxygen. X-ray diffraction, transmission electron microscopy x-ray photoelectron spectroscopy illustrate that a small amount dopant can inhibit grain growth limit size because formation Ge Sb oxide. Atomic force reflectivity results indicate film surface becomes smoother thickness change smaller after doping. Phase memory cells based oxygen-doped fabricated to evaluate properties as well. All demonstrate suitable is an effective way enhance comprehensive performance thin for phase application.