作者: Changzhou Wang , Jiwei Zhai , Suyuan Bai , Bo Shen
DOI: 10.1016/J.APSUSC.2011.02.070
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摘要: Abstract The reliability characteristics and thermal conductivity of Ga 30 Sb 70 /Sb 80 Te 20 nanocomposite multilayer films were investigated by isothermal resistance transient thermoreflectance (TTR) measurements, respectively. crystallization temperature activation energy for the can be modulated varying layer thickness . A data retention time ten years amorphous state [Ga (3 nm)/Sb (5 nm)] 13 , (5 nm)/Sb 10 (10 nm)/Sb 7 was estimated when ambient is 137, 163, 178 °C, found to have lower in both crystalline compared Ge 2 5 film, which will promise programming power phase-change random access memory.