Inductively coupled plasma etching for phase-change material with superlattice-like structure in phase change memory device

摘要: Abstract Phase change material with superlattice-like structure (SLL) is one of the most emerging materials for phase memory device. A rough etching profile, isotropic, and serious surface damage limit application conventional lift-off process. well controlled process to achieve high etch rate, smooth surface, vertical nanometer-sized pattern SLL required mass production devices. In this study, rates, roughness sidewall angles GeTe/Sb2Te3 films were investigated by inductively coupled plasma various parameters including gas ratio, chamber pressure, bias power coil radio frequency (RF) power. The selectivity SiO2 photo-resist characterized. X-ray photoelectron spectroscopy (XPS) etched surfaces confirmed mechanism in Cl2/Ar chemistry. 86 nm-sized patterns fabricated using optimized parameters. addition, an film was integrated into a “T” type PCRAM cell, 50 nm feature size. This cell operated successfully RESET current only 145 μA obtained.