摘要: Crystallization properties of thermally deposited amorphous Al x ( Ge 2 Sb Te 5 ) 1 − = 0.06 and 0.10) films were investigated. The crystallization was performed by both macroscopic thermal annealing nanopulse laser illumination λ 658 nm beam diameter μ m ). 0.10 0.90 film exhibited a very stable one-step phase transition from → face-centered cubic fcc in the temperature range 100 – 300 ° C . had higher sheet resistances R S crystalline phases compared to film, resulting lower set reset programming currents phase-change random-access memory. speed v amorphousfilms quantitatively qualitatively evaluated through analysis surface images reflection-response curves. Conclusively, atom added into serves as center for suppression fcc-to-hexagonal -value largely improved proper addition Al, e.g., [ ] > Additionally, believed result improvements nucleation growth processes.
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