Study of laser crystallization and recording properties of oxygen doped Ge:Sb:Te films

摘要: The aim of this work is to study the mechanism amorphous-to-crystalline phase transformation in Ge 1 Sb 2 Te 4 films doped with oxygen using nanosecond laser pulses under isothermal annealing time scale minutes. Experimental results show that nucleation time, t nucl (minimum pulse duration for starting laser-induced crystallization) depends on concentration films. For those compositions range 2-8 at.%, shorter than observed free oxygen. In contrast, 10-28 longer reference sample. Reflection and X-ray measurements minute have shown without annealed conditions, 7 metastable first observed, which subsequently transformed into crystalline phase. This effect increases laser-crystallized materials. at.% be , where it assumed acts as center nucleation, therefore decreasing time. above 10 thermal treatments leads formation stable amorphous GeO . decreases amount available 3 segregation more oxygen, an increase crystallization times crystallization. behavior allows possibility having multilevel recording.