作者: Roberto Bez
DOI: 10.1016/J.MEE.2005.04.076
关键词:
摘要: In the last decade, impressive growth of portable systems market has been also sustained by availability successful semiconductor Non-Volatile Memory (NVM) technologies. The key driver Flash memory, in particular NAND Flash, preeminent NVM technology for mass storage application electronic systems. needs higher and density memory will continuously grow, driven, example, huge amount long video recording. this contest is growing industrial interest to explore new technologies able guarantee a increase beyond, cost competitive with, existing Flash. paper presents innovative technologies, that exploit materials, different physical concepts alternative array architectures with respect memories today, attention minimum cell size passive arrays (cross-point memory), based on ferroeletric or conductive polymers, magnetic tunnel junction chalcogenide alloy. A final section dedicated mechanical decoded probe technology, so-called ''seek scan'' approach, like one used Hard-Disk Compact-Disk, could have interesting applications several fields, ranging from molecular manipulation, thus tracing route post-Moore's law development.