Innovative technologies for high density non-volatile semiconductor memories

作者: Roberto Bez

DOI: 10.1016/J.MEE.2005.04.076

关键词:

摘要: In the last decade, impressive growth of portable systems market has been also sustained by availability successful semiconductor Non-Volatile Memory (NVM) technologies. The key driver Flash memory, in particular NAND Flash, preeminent NVM technology for mass storage application electronic systems. needs higher and density memory will continuously grow, driven, example, huge amount long video recording. this contest is growing industrial interest to explore new technologies able guarantee a increase beyond, cost competitive with, existing Flash. paper presents innovative technologies, that exploit materials, different physical concepts alternative array architectures with respect memories today, attention minimum cell size passive arrays (cross-point memory), based on ferroeletric or conductive polymers, magnetic tunnel junction chalcogenide alloy. A final section dedicated mechanical decoded probe technology, so-called ''seek scan'' approach, like one used Hard-Disk Compact-Disk, could have interesting applications several fields, ranging from molecular manipulation, thus tracing route post-Moore's law development.

参考文章(13)
Y. Asao, T. Kajiyama, Y. Fukuzumi, M. Amano, H. Aikawa, T. Ueda, T. Kishi, S. Ikegawa, K. Tsuchida, Y. Iwata, A. Nitayama, K. Shimura, Y. Kato, S. Miura, N. Ishiwata, H. Hada, S. Tabara, H. Yoda, Design and process integration for high-density, high-speed, and low-power 6F/sup 2/ cross point MRAM cell international electron devices meeting. pp. 571- 574 ,(2004) , 10.1109/IEDM.2004.1419224
Jong-Ho Park, Sung-Hoi Hur, Joun-Hee Lee, Jin-Taek Park, J.-S. Sel, Jong-Won Kim, Sang-Bin Song, Jung-Young Lee, Ji-Hwon Lee, Suk-Joon Son, Yong-Seok Kim, Min-Cheol Park, Sooin Chai, Jung-Dal Choi, U.-I. Chung, Joo-Tae Moon, Kycong-Tae Kim, Kinam Kim, Byang-Il Ryu, 8 Gb MLC (multi-level cell) NAND flash memory using 63 nm process technology international electron devices meeting. pp. 873- 876 ,(2004) , 10.1109/IEDM.2004.1419319
S. Gidon, O. Lemonnier, B. Rolland, O. Bichet, C. Dressler, Y. Samson, Electrical probe storage using Joule heating in phase change media Applied Physics Letters. ,vol. 85, pp. 6392- 6394 ,(2004) , 10.1063/1.1834718
Caroline Sunyong Lee, Hyo-Jin Nam, Young-Sik Kim, Won-Hyeog Jin, Seong-Moon Cho, Jong-uk Bu, Microcantilevers integrated with heaters and piezoelectric detectors for nano data-storage application Applied Physics Letters. ,vol. 83, pp. 4839- 4841 ,(2003) , 10.1063/1.1633009
F. Masuoka, M. Momodom, Y. Iwata, R. Shirota, New ultra high density EPROM and flash EEPROM with NAND structure cell international electron devices meeting. ,vol. 25, pp. 552- 555 ,(1987) , 10.1109/IEDM.1987.191485
H. Nakamura, K. Imamiya, T. Himeno, T. Yamamura, T. Ikehashi, K. Takeuchi, K. Kanda, K. Hosono, T. Futatsuyama, K. Kawai, R. Shirota, N. Arai, F. Arai, K. Hatakeyama, H. Hazama, M. Saito, H. Meguro, K. Conley, K. Quader, Jian Chen, A 125mm/sup 2/ 1Gb NAND flash memory with 10MB/s program throughput international solid-state circuits conference. ,vol. 2, pp. 82- 411 ,(2002) , 10.1109/ISSCC.2002.992123
Roberto Bez, Agostino Pirovano, Non-volatile memory technologies: emerging concepts and new materials Materials Science in Semiconductor Processing. ,vol. 7, pp. 349- 355 ,(2004) , 10.1016/J.MSSP.2004.09.127
P. Vettiger, G. Cross, M. Despont, U. Drechsler, U. Durig, B. Gotsmann, W. Haberle, M.A. Lantz, H.E. Rothuizen, R. Stutz, G.K. Binnig, The "millipede" - nanotechnology entering data storage IEEE Transactions on Nanotechnology. ,vol. 1, pp. 39- 55 ,(2002) , 10.1109/TNANO.2002.1005425
E. Eleftheriou, T. Antonakopoulos, G.K. Binnig, G. Cherubini, M. Despont, A. Dholakia, U. Durig, M.A. Lantz, H. Pozidis, H.E. Rothuizen, P. Vettiger, "Millipede": a MEMS-based scanning-probe data-storage system asia pacific magnetic recording conference. ,vol. 39, pp. 938- 945 ,(2002) , 10.1109/TMAG.2003.808953
Jan Van Houdt, Pieter Blomme, Bogdan Govoreanu, Christina De Meyer, A novel low voltage memory device with an engineered SiO2/high-k tunneling barrier IEEE. pp. 93- 94 ,(2003)