Non-volatile memory technologies: emerging concepts and new materials
作者： Roberto Bez , Agostino Pirovano
DOI: 10.1016/J.MSSP.2004.09.127
关键词: Focus (computing) 、 Phase-change memory 、 Materials science 、 Computer architecture 、 Ferroelectric RAM 、 Nanotechnology 、 Magnetoresistive random-access memory 、 New materials 、 Non-volatile memory 、 Exploit 、 Flash (photography)
摘要: … current status of non-volatile memory technology, focusing on the … memories (MRAM), the fast growing phase-change memory (PCM) technology will be discussed. The ultimate memory …
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sci-hub.se 参考文章(3)
R. Bez, E. Camerlenghi, A. Modelli, A. Visconti, Introduction to flash memory Proceedings of the IEEE. ,vol. 91, pp. 489- 502 ,(2003) , 10.1109/JPROC.2003.811702
K. F. Lai, R. B. Zhang, Multiplicity Free Actions of Quantum Groups and Generalized Howe Duality Letters in Mathematical Physics. ,vol. 64, pp. 255- 272 ,(2003) , 10.1023/A:1025776405712
Sven Möller, Craig Perlov, Warren Jackson, Carl Taussig, Stephen R. Forrest, A polymer/semiconductor write-once read-many-times memory Nature. ,vol. 426, pp. 166- 169 ,(2003) , 10.1038/NATURE02070