Investigation of Al doping on Ge55Te45 for phase change memory application
作者： Kun Ren , Feng Rao , Zhitang Song , Liangcai Wu , Mengjiao Xia
DOI: 10.1063/1.4811683
关键词: Phase-change memory 、 Data retention 、 Sputter deposition 、 Germanium compounds 、 Band gap 、 Crystallization 、 Crystallography 、 Doping 、 Materials science 、 Composite material 、 Crystallization temperature
摘要: Al-doped Ge55Te45 materials are proposed for phase change memory application. Al incorporated in increases the crystallization temperature, band gap and 10-year data retention significantly. However, speed of material will be lowered by excessive doping. The film is observed to growth-dominant, beginning with a random formation spherical crystalline clusters. Al1Ge55Te45 117 °C 5 ns, respectively, which makes promising candidate high PCM 132 °C good cyclic ability ∼2 × 103 cycles Al2Ge55Te45 based have shown its application potential automotive fields.
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