Thermal characterization and analysis of phase change random access memory
作者： V. Giraud , J. Cluzel , V. Sousa , A. Jacquot , A. Dauscher
DOI: 10.1063/1.1944910
关键词: Thermal 、 Titanium nitride 、 Thin film 、 Thermal conductivity measurement 、 Tin 、 Amorphous solid 、 Fabrication 、 Composite material 、 Thermal conductivity 、 Materials science 、 General Physics and Astronomy
摘要: The cross-plane thermal conductivity of Ge2Sb2Te5, either in its amorphous state or fcc crystallized state, and titanium nitride (TiN) thin films has been measured at room temperature by the 3ω method. These materials are involved fabrication phase change random access memory (PC-RAM), Ge2Sb2Te5 TiN being PC pseudoelectrode materials, respectively. insulating SiO2 ZnS:SiO2 layers was determined too. Each measurement performed means least two strip widths order to check both self-consistency accuracy. performance PC-RAM cells, i.e., time needed reach melting material cooling speed, evaluated as a function reset current intensity independently properties pseudoelectrodes way analytical formula. influence thicknes...
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