CORRELATION BETWEEN IRRADIATION AND THERMALLY INDUCED DEFECTS IN II-VI COMPOUNDS

作者: M. R. Lorenz , M. Aven , H. H. Woodbury

DOI: 10.1103/PHYSREV.132.143

关键词: PhotochemistryCadmium telluride photovoltaicsZincElectron beam processingIrradiationZinc compounds

摘要: Recently, a unique new double-acceptor defect produced in CdS and CdTe by heat-treating singie crystals at 800 to 1000 deg C Cd was reported. An analogous observed ZnSe fired liquid Zn. The production of this CdTe, CdS, electron irradiation is (auth)

参考文章(2)
M. R. Lorenz, H. H. Woodbury, Double Acceptor Defect in CdTe Physical Review Letters. ,vol. 10, pp. 215- 217 ,(1963) , 10.1103/PHYSREVLETT.10.215
R. E. Halsted, B. Segall, Double Acceptor Fluorescence in II-VI Compounds Physical Review Letters. ,vol. 10, pp. 392- 395 ,(1963) , 10.1103/PHYSREVLETT.10.392