Electron beam lithography from 20 to 120 keV with a high quality beam

摘要: We have performed electron beam lithography studies on thick substrates using energies of 20–120 keV and a nominal diameter 2 nm in Philips 400 microscope with scanning capability. Metal lines as narrow 10 were fabricated Si GaAs liftoff single thin layer resist. High resolution (approximately nm) patterns could be written at all an exposure latitude that remained approximately constant up to for which the range backscattered electrons became significantly larger than pattern area. For large area small beam, proximity effect is greatly reduced, even 20 keV, because sharp edge profile. At high energies, enough they contribute only slowly varying background dose, leading relatively simple correction complex patterns.