Shallow trench isolation method for reducing oxide thickness variations at different pattern densities
作者： Chang Wen , Chuan-Ping Hou , Jang Syun Ming , Chih-Cheng Lu , Chu-Yun Fu
DOI:
关键词: Mineralogy 、 Dielectric layer 、 Chemical-mechanical planarization 、 Deposition (chemistry) 、 Materials science 、 Sputtering 、 Shallow trench isolation 、 Trench 、 Composite material 、 Oxide
摘要: A method of reducing oxide thickness variations in a STI pattern that includes both dense trench array and wide is described. first HDP CVD step with deposition/sputter (D/S) ratio 9.5 used to deposit dielectric layer 120 130% the shallow depth. An etch back performed same chamber NF3, SiF4 or NF3 remove about 40 50% initial layer. second D/S 16 deposits an additional level slightly higher than after deposition. The deposition form smoother surface which enables subsequent planarization provide filled features minimal amount dishing trenches.
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