Rule to determine CMP polish time
作者： Wen-Pin Chang , Ying-Lang Wang , Yu-Ku Lin , Hway-Chi Lin
DOI:
关键词: Wafer 、 Dielectric 、 Linear relationship 、 Engineering drawing 、 Chemical-mechanical planarization 、 Composite material 、 Materials science
摘要: A simple method for calculating the optimum amount of HDP deposited material that needs to be removed during CMP (without introducing dishing) is described. This derives from our observation a linear relationship between in order achieve full planarization and quantity called “OD density”. The latter defined as PA×(100−PS) where PA percentage active area relative total wafer PS sub-areas area. are regions dielectric, above areas, etched out prior CMP. Thus, once materials have been characterized, removal thickness readily calculated wide range different circuit implementations.
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