Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
作者： Tsyr-Shyang Liou , Kuan-Lun Chang , Chih-Min Chiang , Ruey-Hsin Liu , Jun-Lin Tsai
DOI:
关键词: Isolation (database systems) 、 Semiconductor device 、 Geology 、 Electronic engineering 、 BiCMOS 、 Trench 、 Deep trench 、 Shallow trench isolation 、 CMOS 、 Optoelectronics
摘要: A method of forming a shallow trench-deep trench isolation for semiconductor device is provided.
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