Trench junction barrier controlled schottky
作者： Anup Bhalla , Sik K. Lui
DOI:
关键词:
摘要: A method for manufacturing a Schottky diode comprising steps of 1) providing region with dopant second conductivity type opposite to first form top doped in semiconductor substrate said type; 2) trench through the predetermined depth and bottom 3) lining barrier metal layer on sidewall at least extending from region.
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