Vertical power transistor device
作者： Vipindas Pala , Lin Cheng , Anant Kumar Agarwal , John Williams Palmour , Daniel Jenner Lichtenwalner
DOI:
关键词: Time-dependent gate oxide breakdown 、 Gate dielectric 、 Gate oxide 、 JFET 、 Electrical engineering 、 MOSFET 、 Materials science 、 Layer (electronics) 、 Transistor 、 Power semiconductor device 、 Optoelectronics
摘要: A power metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, drift layer over the and spreading layer. The pair of junction implants separated by gate field effect (JFET) region. oxide is on top contact Each one source contacts are portion separate from contact. drain surface substrate opposite
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